ETCHERS
Primary materials etched are indicated for each equipment
Etchers types:
Inductively Coupled Plasma (ICP), Reactive Ion Etching (RIE), Plasma Mode Etching (PLASMA), Asher (ASHER), Vapor Etching (VAPOR)
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Oxford III-V ICP
Gallium Arsenide (GaAs)
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Plasma Therm Versaline LL ICP Metal Etcher ICP
Various metals
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Plasma Therm Versaline LL ICP Dielectric Etcher ICP
Various metals
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STS Deep RIE Etcher ICP
Silicon (Si)
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Lam Research TCP 9400 Poly Etcher ICP
Silicon (Si), Poly Silicon (Si)
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AMT Oxide Plasma Etcher RIE
Photoresist, Silicon (Si), Silicon dioxide (SiO2), Silicon Nitride (SiN)
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MRC Reactive Ion Etcher RIE
Various dielectrics, Various metals
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Oxford Dielectric Etcher RIE
PI (Polyimide), Silicon Carbide (SiC), Silicon dioxide (SiO2), Silicon Nitride (SiN)
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Drytek 100 Plasma Etcher PLASMA
Photoresist, Poly Silicon (Si), Silicon (Si), Silicon Nitride (SiN)
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Samco PC300 Plasma Etch System PLASMA
Photoresist
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Gasonics Aura Asher ASHER
Photoresist
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Matrix Plasma Resist Strip ASHER
Photoresist
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Xactix Xenon Difluoride Etcher VAPOR
Germanium (Ge), Silicon (Si), Silicon Germanium (SiGe)
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SPTS uetch vapor etch VAPOR
Silicon dioxide (SiO2)
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AMAT P5000 Etcher RIE
Poly Silicon (Si), Si based materials (Si based materials), Silicon (Si), Silicon dioxide (SiO2), Silicon Germanium (SiGe), Silicon Nitride (SiN), Silicon Oxynitride (SiON)
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Technics Asher ASHER
Photoresist
FURNACES
Accepted materials are indicated for each equipment
Furnaces types:
Oxide Growth (THERMAL), Forming Gas Annealing (FGA), Rapid Thermal Annealing (RTA)
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Thermco1,2 and 3 THERMAL
Dry & Wet oxidation, Nitrogen anneal
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Tylanfga FGA
10% H2 in N2, N2
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Aw610_r and Aw610_l RTA
4% H2 in N2, N2, Ar, O2, NH3
CVD TOOLS
Accepted materials are indicated for each equipment
CVD types:
Plasma Enhanced ALD (PE-ALD), Thermal ALD (T-ALD), Low-Pressure CVD (LPCVD), Plasma-Enhanced CVD (PECVD)
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Fiji 1 PE-ALD
Diele Alumina (Al2O3), Dielectrics (Various), Hafnia (HfO2), Hafnium Nitride (HfN), Metal oxides (Metal oxides), Platinum (Pt), Ruthenium (Ru), Silicon dioxide (SiO2), TaN (TaN), Tantalum Pentoxide (Ta2O5), Titania (TiO2), Ti Nitride (TiN), Zirconia (ZrO2)
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Fiji 2 PE-ALD
Alumina (Al2O3), Dielectrics (Various), Gallium Oxide (Ga2O3), Hafnia (HfO2), Hafnium Nitride (HfN), Indium Oxide (In2O3), ITO (InxSnyOz), Metal oxides (Metal oxides), Molybdenum Oxide (MoO3), Nickel Oxide (NixOy), Platinum (Pt), Ruthenium (Ru), Silicon dioxide (SiO2), Silicon Nitride (SiN), Strontium Oxide (SrO) Tantalum Pentoxide (Ta2O5), Tin Oxide (SnO2), Titania (TiO2), Ti Nitride (TiN), Zirconia (ZrO2)
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Fiji 3 PE-ALD
Alumina (Al2O3), Dielectrics (Various), Hafnia (HfO2), Silicon dioxide (SiO2), Titania (TiO2)
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Savannah T-ALD
AZO (AlxZnyOx), Alumina (Al2O3), Dielectrics (Various), Gallium Oxide (Ga2O3), Hafnia (HfO2), Metal oxides (Metal oxides), Tin Oxide (SnO2), Titania (TiO2), Zinc Oxide (ZnO3), Zirconia (ZrO2)
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Epi2 Epi
Germanium (Ge), Poly Silicon (Si), Silicon (Si), Silicon Germanium (SiGe)
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ThermcoPoly1 and 2 LPCVD
Germanium (Ge), Poly Silicon (Si), Silicon (Si), Silicon Germanium (SiGe)
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STS Plasma Enhanced CVD PECVD
Silicon dioxide (SiO2), Silicon Nitride (SiN)
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PlasmaTherm Shuttlelock PECVD System PECVD
Silicon dioxide (SiO2), Silicon Nitride (SiN)
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PlasmaTherm Versaline HDP CVD System PECVD
Silicon dioxide (SiO2), Silicon Nitride (SiN)
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The rmcoLTO LPCVD
Silicon dioxide (SiO2)
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TylanBPSG LPCVD
Silicon dioxide (SiO2)
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ThermcoNitride LPCVD
Silicon Nitride (SiN)
For all additional details regarding the equipment available at the SNF, please refer to the official website.